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coupled electrostatics and solid mechanics model  (COMSOL Inc)

 
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    COMSOL Inc coupled electrostatics and solid mechanics model
    Coupled Electrostatics And Solid Mechanics Model, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/electrostatic+model/coupled+electrostatics+and+solid+mechanics+model/10__1088_slash_1748___605x_slash_ade8c6-154-18-26
    Average 90 stars, based on 1 article reviews
    coupled electrostatics and solid mechanics model - by Bioz Stars, 2026-09
    90/100 stars

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    other:

    Article Title: Electric field measurements on plasma bullets in N<sub>2</sub>using four-wave mixing
    Article Snippet: The resulting electric field distribution is obtained from an electrostatic model in COMSOL and subsequently the integral along the laser path is calculated.

    Article Title: Multiformity of extracellular microelectrode recordings from Aδ neurons in the dorsal root ganglia: A computational modeling study
    Article Snippet: We applied a load boundary condition of 1 A to the active contact and we solved the electrostatic model in COMSOL using the conjugate gradient method to solve Laplace’s equation: where σ is a matrix of the different tissue conductivities and Φ is the resulting potential field.

    Article Title: System and method for model-predictive-control-based micro-assembly control with the aid of a digital computer
    Article Snippet: The COMSOL electrostatic model used the following parameters 19: the diameter of the chiplets 11, the electrode 12 dimensions, the dielectric fluid constant (ε=2) and the positions and material of the sphere and electrode.


    Article Title: Quantitative simulation of extracellular single unit recording from the surface of cortex
    Article Snippet: We implemented an electrostatic model with the above dimensions in COMSOL 5.2a (Comsol Inc., Burlington Massachusetts).

    Article Title: Ultrafast Binder-Free Corona Discharge-Enabled Automated Electrostatic Patterning (AEP) Technique.
    Article Snippet: Get e-Alerts SURFACES, INTERFACES, AND APPLICATIONS | April 1, 2025 Ultrafast Binder-Free Corona Discharge-Enabled Automated Electrostatic Patterning (AEP) Technique , , , , , , , , and ACS Applied Materials & Interfaces Cite this: ACS Appl.. Mater.. Interfaces 2025, 17, 15, 23249–23262 https://doi.org/10.1021/acsami.4c22698 Copyright © 2025 American Chemical Society Request reuse permissions Cite Share Jump to Zijian Weng Marcelo Farfan Evan Williams Parinitha Giridharan Logan G Schmid David Murphy Long Wang Wenbin Mao* Ying Zhong* Open PDF Supporting Information (7) Article Views 200 Altmetric Citations Learn about these metrics Published April 1, 2025 5/29/25, 7:49 PM Ultrafast Binder-Free Corona Discharge-Enabled Automated Electrostatic Patterning (AEP) Technique | ACS Applied Materials & Interfaces https://pubs.acs.org/doi/10.1021/acsami.4c22698 2/32 Patterning techniques have garnered extensive attention within the realm of printed electronics owing to their substantial contributions across multifarious applications.

    Article Title: Quantitative simulation of extracellular single unit recording from the surface of cortex
    Article Snippet: The electrostatic model was solved in COMSOL using a linear solver.

    Software:

    Article Title: Study of a Hybrid Generator Based on Triboelectric and Electromagnetic Mechanisms
    Article Snippet: Energy harvesting technique has been identified as an innovative and environment-friendly way for powering micro sensors and electronic devices.. In this paper, a hybrid generator based on triboelectric and electromagnetic mechanisms (TMHG), which provides two electrical power outputs at the same time, was proposed.. The output performance in time and frequency domains are investigated at different initial gap distances and excitation accelerations.



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    COMSOL Inc electrostatic models
    Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the <t>electrostatic</t> strength of SL potential.
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    Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

    Journal: ACS Nano

    Article Title: Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices

    doi: 10.1021/acsnano.4c14500

    Figure Lengend Snippet: Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

    Article Snippet: We performed numerical calculations in COMSOL using electrostatic models to illustrate how the permittivity of the nanopatterned dielectric affects the U SL strength in graphene at a fixed V SL .

    Techniques: